| PART |
Description |
Maker |
| LC35V1000BTS-70U LC35V1000BM LC35V1000BM-70U LC35V |
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM
Static RAMs (1Mb)
Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
|
SANYO[Sanyo Semicon Device]
|
| BS62LV4000 |
Asynchronous 4M(512Kx8) bits Static RAM
|
BSI
|
| BS616LV1011 BS616LV1011EIP70 BS616LV1011AC BS616LV |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit 非常低功电压CMOS SRAM4K的16
Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| BS616LV1013 BS616LV1013EIP70 BS616LV1013AC BS616LV |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit 非常低功电压CMOS SRAM4K的16
Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, Inc.
BSI[Brilliance Semiconductor]
|
| BS62LV2008 BS62LV2016SI BS62LV2008DC BS62LV2008DC- |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8
From old datasheet system
Asynchronous 2M(256Kx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| IDT72T51236L5BB IDT72T51236L5BBI IDT72T51256L6BBI |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
IDT[Integrated Device Technology]
|
| EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位）
|
Elpida Memory, Inc.
|
| IDT72T51333 IDT72T51333L5BB IDT72T51333L5BB8 IDT72 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
8Q x18 512K Multi-Queue, 2.5V
|
Integrated Device Technolog...
IDT
|
| BS62LV4007 BS62LV4007TIP70 BS62LV4007EC BS62LV4007 |
Asynchronous 4M(512Kx8) bits Static RAM
High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel
surface mount silicon Zener diodes
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| TC58FVM7T2AFT65 TC58FVM7B2 TC58FVM7B2AFT TC58FVM7B |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
